advanced power p-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss -60v simple drive requirement r ds(on) 64m fast switching characteristic i d -17a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 4.0 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data and specifications subject to change without notice + 20 -17 halogen-free product AP9575AGI-HF rating -60 -11 pulsed drain current 1 thermal data parameter storage temperature range -55 to 150 31.3 total power dissipation -60 -55 to 150 200908031 parameter drain-source voltage gate-source voltage continuous drain current, v gs @ 10v continuous drain current, v gs @ 10v 1 operating junction temperature range g d s g d s to-220cfm(i) advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-220cfm isolation package is widely preferred for commercial- industrial through hole applications.
ap9575agi-h f electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -60 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-12a - - 64 m ? , ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-12a, v gs =0v - - -1.3 v t rr reverse recovery time 2 i s =-12a, v gs =0v, - 43 - ns q rr reverse recovery charge di/dt=-100a/s - 75 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2
a p9575agi-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 40 50 60 70 80 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-8a t c =25 0 10 20 30 40 50 02468 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v - 7 .0v - 6 .0v - 5.0 v v g =-4.0v 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -12a v g = -10v 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v) 0 10 20 30 40 0246810 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =150 o c -10v -7.0v -6.0v -5.0v v g = -4.0v
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 ap9575agi-h f q v g -10v q gs q gd q g charge 0 2 4 6 8 10 12 0 10203040 q g , total gate charge (nc) -v gs , gate to source voltage (v) v ds = -48v i d = -12a 0 400 800 1200 1600 2000 2400 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 sin g le pulse 0 1 10 100 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc t d(on) t r t d(off) t f v ds v gs 10% 90% operation in this area limited by r ds(on)
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